PURPOSE: To make it possible to obtain an artificial lattice magnetoresistance effect film, which changes its resistance in the vicinity of a magnetic field of zero even if there is not a bias mechanism, by a method wherein the respective coercive forces of adjacent magnetic thin films are specified.

CONSTITUTION: Two kinds of magnetic thin films 2 and 3 having different coercive forces are alternately laminated on a substrate interposing each non- magnetic thin film between the thin films 2 and 3 to obtaina magnetoresistance effect film. When the respective coercive forces of the adjacent thin films 2 and 3 are set as Hc2 and Hc3 (0<Hc2<Hc3) and an anisotropic magnetism, which is applied to the magnetic thin films having the coercive force Hc2, in a signal magnetic field direction is set as Hk2, the coercive forces and the magnetism are set on the condition of Hc2(Hk2<Hc3. A pattern width of the effect film is set in a width of 1 to 30μm. The magnetic thin films having the coercive force Hc2 contain an NiFe alloy or an NiFeMo alloy and these alloys as their main components. Thereby, a highly reliable artificial lattice magnetoresistance effect film, which does not need a bias mechanism, can be obtained.