Title:
【発明の名称】反射防止二重層コ-テイングを備えた光感応半導体デバイス
Document Type and Number:
Japanese Patent JP2539780
Kind Code:
B2
Abstract:
@ An improved dual layer anti-reflective coating for use in a photoresponsive semiconductor device (12c) is disclosed. The coating has a low parasitic absorbance in the range of about 475 to 600 nanometers. The dual layer has an incident light layer (22) and an intermediate layer (20c). The light incident layer may be a transparent conductive oxide. The Intermediate layer is formed of a silicon alloy including at least one band gap energy widening element and may be the outermost layer of the device. The intermediate layer has an index of refraction between the indices of refraction of the incident light layer and the underlying photoresponsive semiconductor device. The relative thicknesses of the incident light layer and intermediate layer are chosen to maximise the amount of light transmitted to the photoresponsive device.
More Like This:
| JPH05259076 | SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
| JP2006324100 | DYE SENSITIZED SOLAR CELL |
Inventors:
JON MAKUGIRU
Application Number:
JP3363185A
Publication Date:
October 02, 1996
Filing Date:
February 21, 1985
Export Citation:
Assignee:
ENAAJII KONBAAJON DEBAISESU INC
KYANON KK
KYANON KK
International Classes:
H01L31/04; H01L31/0216; H01L31/075; (IPC1-7): H01L31/04
Domestic Patent References:
| JP5664476A | ||||
| JP5868046U |
Other References:
【文献】「アモルファス太陽電池」第181~184頁,第169~172頁(高橋清外1名著,(株)昭晃堂昭和58年8月15日発行)
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)