Title:
【発明の名称】インジウムイオンビームの発生方法および関連装置
Document Type and Number:
Japanese Patent JP3374842
Kind Code:
B2
Abstract:
An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600° C. to lower than 1170° C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.
Inventors:
Takatoshi Yamashita
Application Number:
JP2000343395A
Publication Date:
February 10, 2003
Filing Date:
November 10, 2000
Export Citation:
Assignee:
Nissin Electric Co., Ltd.
International Classes:
C23C14/32; C22B4/00; C22B4/08; C22B58/00; C23C14/22; C23C14/24; H01J27/02; H01J37/08; H01J37/317; (IPC1-7): H01J27/02; C23C14/32; H01J37/08
Domestic Patent References:
| JP313576A | ||||
| JP200030620A | ||||
| JP9324262A | ||||
| JP634800A |
Attorney, Agent or Firm:
Keiji Yamamoto