Title:
【発明の名称】シリコン微細機械素子の製造方法
Document Type and Number:
Japanese Patent JP2879733
Kind Code:
B2
Abstract:
A method for manufacturing a minute silicon mechanical device, which includes the steps of forming a diffusion region by doping a predetermined portion of a silicon substrate with an impurity of high density; forming an epitaxial layer over the silicon substrate including the diffusion region and forming an oxide layer over the epitaxial layer; forming an ohmic contact layer at the lower surface of the silicon substrate; patterning the oxide layer to have a striped configuration at that portion of the oxide layer corresponding to the predetermined portion of the diffusion region, thus exposing a predetermined portion of the epitaxial layer; forming a plurality of beams having a striped configuration by etching the exposed portion of the epitaxial layer, using the oxide layer as a mask and then removing the oxide layer; and removing the diffusion region below the plurality of beams.
Inventors:
SEOKUUSOO RII
Application Number:
JP22942997A
Publication Date:
April 05, 1999
Filing Date:
August 26, 1997
Export Citation:
Assignee:
ERU JII SEMIKON CO LTD
International Classes:
C25F3/12; B81B3/00; H01L21/306; H01L21/3063; H01L49/00; (IPC1-7): H01L49/00; H01L21/3063
Attorney, Agent or Firm:
Fumio Sasashima (1 person outside)