Title:
III NITRIDE COMPOUND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2001223385
Kind Code:
A
Abstract:
To improve light-emission output by reducing the effect of distortion of an n-contact layer on a light-emitting layer.
An intermediate layer which is softer than a contact layer while comprising a material different in kind from the contact layer is formed between the contact layer and a clad layer.
Inventors:
TAKI TETSUYA
ASAI MAKOTO
SAWAZAKI KATSUHISA
ASAI MAKOTO
SAWAZAKI KATSUHISA
Application Number:
JP2000034423A
Publication Date:
August 17, 2001
Filing Date:
February 14, 2000
Export Citation:
Assignee:
TOYODA GOSEI KK
International Classes:
H01L21/205; H01L33/32; H01L33/42; (IPC1-7): H01L33/00; H01L21/205
Attorney, Agent or Firm:
Fumiya Konishi (1 person outside)
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