Title:
PROCESS DEVICE
Document Type and Number:
Japanese Patent JP3122228
Kind Code:
B2
Abstract:
PURPOSE: To perform self-cleaning by applying high frequency power of different frequency to two electrodes in a vacuum vessel, supporting a wafer onto the one electrode, plasma-exciting gas, and increasing impedance between the wafer electrode and the earth as necessary.
CONSTITUTION: At sputtering time, an Si wafer is placed on a lower part electrode 107. A switch 114 is connected to a side of a high frequency generating unit 112, to introduce Ar from an inlet 103 to a vacuum vessel 108, and high frequency power of 100MHz or more is applied from a high frequency unit 101 to an upper part electrode 105, to heat the Si wafer on the lower part electrode 107 to about 300°C biased to about -300V. Si106 is spattered and deposited to the wafer on the electrode 107 by an Ar ion in plasma. A +10V self bias is applied to the electrode 107, and an Si single crystal is obtained at a low temperature when applied 30 to 50MHz. At cleaning time, the switch 114 is placed to a side of a coil 110, to introduce CF4, and 100MHz power is applied to the electrode 105 to produce plasma. A high frequency current easily flows toward the vacuum vessel 108 to sufficiently spread, and sticking matter on a surface can be removed.
Inventors:
Tadahiro Ohmi
Application Number:
JP14633292A
Publication Date:
January 09, 2001
Filing Date:
May 13, 1992
Export Citation:
Assignee:
Tadahiro Ohmi
International Classes:
C23C14/22; C23C14/34; C23C14/56; C23C16/44; C23F4/00; H01J37/32; H01L21/302; H01L21/3065; H01L21/31; H05H1/02; H05H1/46; (IPC1-7): H05H1/46; C23C14/22; C23F4/00; H01L21/3065; H01L21/31
Attorney, Agent or Firm:
Hisao Fukumori