To provide an image sensor capable of preventing the generation of a charge sharing phenomenon, while improving a fill factor, and capable of minimizing the number of dark current sources and preventing deterioration in saturation and sensitivity, by imparting a smooth transfer path of photocharges between a photodiode and a read-out circuit, and to provide a manufacturing method therefor.
The image sensor includes a first substrate having a circuit which includes a wiring; a photodiode formed on the first substrate, while contacting the wiring, wherein the circuit of the first substrate includes an electrical junction region formed on one side of the first substrate; and a high-concentration first conductivity-type region formed so as to contact the electric junction region, while being connected to the wiring on the upper part of the electrical junction region.
KIM SEOUNG HYUN
JOON HWANG
KIM KUANG-SOO
HAN JIN-SU
| JP2007273945A | 2007-10-18 | |||
| JPH05153501A | 1993-06-18 |