PURPOSE: To improve S/N ratio by composing an electrode of light incident side of a double-layer structure of a transparent electrode and an opaque electrode with light-transmitting holes.
CONSTITUTION: Cr electrodes 2 are formed on a glass substrate 1 and an amorphous Si layer 3 is formed over them. After a Cr film is formed, a transparent and conductive silicide film 4 (upper electrode) is formed by a treatment at 200°C for 1hr. The amorphous layer 3 is selectively etched to form transmitting holes for incident light and opaque electrodes 5 are attached. With this constitution, as the upper electrode tightly contacted with the amorphous Si film for photoelectric conversion is used as a light-shielding film, the light entering the amorphous Si film between adjacent electrodes can be efficiently and securely suppressed so that S/N ratio can be improved.
MATSUZAKI EIJI
KENMOCHI AKIHIRO
KURIHARA HIROSUKE
