To provide an imaging device which can increase the number of electrons by electrons in accordance with a quantity of electric charge of each pixel, and which can be prevented from increasing in size.
The imaging device comprises a p-type silicon substrate 1, a photoelectric conversion layer 19 for generating electrons by receiving light, and a hermetically sealed space 30 which is formed for each pixel in such a manner that it may reach the surface of an n+-type impurity region 2b of the p-type silicon substrate 1, and that it may be kept to a pressure capable of emitting the electrons generated by the photoelectric conversion layer 19. By making the electrons emitted to the space 30 collide with the n+-type impurity region 2b of the p-type silicon substrate 1, the number of electrons can be increased which constitute signal charge.
KANDA YASUKATSU
SASADA KAZUHIRO
SHIMIZU TATSU
