Title:
IMAGING DEVICE
Document Type and Number:
Japanese Patent JP2019216270
Kind Code:
A
Abstract:
To provide an imaging device having high imaging quality and capable of being manufactured at low cost.SOLUTION: An imaging device comprises a first circuit including a first transistor and a second transistor, and a second circuit including the second transistor and a photodiode. The first transistor is provided on a first surface of a silicon substrate. The second transistor is provided on the first surface of the silicon substrate via a first insulating layer. The silicon substrate includes a second insulating layer. The second insulating layer is provided so as to surround a side surface of the photodiode. The first transistor is a p-ch type transistor including an active region on the silicon substrate. The second transistor is an n-ch type transistor including an oxide semiconductor layer as an active layer. A light-receiving surface of the photodiode is provided on a surface on the side opposite to the first surface of the silicon substrate.SELECTED DRAWING: Figure 1
More Like This:
| JPS59191379 | PHOTOELECTRIC CONVERSION ELEMENT |
| JP2004221250 | IMAGING SENSOR AND IMAGING DEVICE |
| JP2013149685 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
Inventors:
YAMAZAKI SHUNPEI
SAKAKURA MASAYUKI
KUROKAWA YOSHIMOTO
SAKAKURA MASAYUKI
KUROKAWA YOSHIMOTO
Application Number:
JP2019163021A
Publication Date:
December 19, 2019
Filing Date:
September 06, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L27/146; H01L21/336; H01L21/8234; H01L21/8238; H01L27/06; H01L27/088; H01L27/092; H01L29/786; H04N5/369; H04N5/374
Domestic Patent References:
| JP2011119711A | 2011-06-16 | |||
| JP2011249677A | 2011-12-08 | |||
| JP2002176190A | 2002-06-21 | |||
| JP2011204915A | 2011-10-13 | |||
| JP2003282848A | 2003-10-03 | |||
| JPH04373181A | 1992-12-25 | |||
| JP2006121108A | 2006-05-11 |