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Patent Searching and Data


Title:
RFスイッチにおける改善されたコンタクト
Document Type and Number:
Japanese Patent JP6853248
Kind Code:
B2
Abstract:
The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.

Inventors:
Robertus Petrus van Kampen
James Douglas Huffman
Michael Renault
Shivajoti Gauche Dustyder
Jack Marcel Muyango
Application Number:
JP2018525406A
Publication Date:
March 31, 2021
Filing Date:
November 14, 2016
Export Citation:
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Assignee:
CAVENDISH KINETICS, INC.
International Classes:
H01H59/00
Domestic Patent References:
JP2003249136A
JP2014525665A
JP8022727A
JP2011181315A
Foreign References:
WO2015017743A1
WO2011036808A1
WO2004015728A1
WO2014209556A1
Attorney, Agent or Firm:
Takuji Yamada
Haruo Nakano