Title:
InGaAlN system semiconductor device
Document Type and Number:
Japanese Patent JP6212124
Kind Code:
B2
Abstract:
Transistors using nitride semiconductor layers as channels were experimentally manufactured. The nitride semiconductor layers were all formed through a sputtering method. A deposition temperature was set at less than 600°C, and a polycrystalline or amorphous In x Ga y Al z N layer was obtained. When composition expressed with a general expression In x Ga y Al z N (where x+y+z=1.0) falls within a range of 0.3¤x¤1.0 and 0¤z¤0.4, a transistor 1 a exhibiting an ON/OFF ratio of 10 2 or higher can be obtained. That is, even a polycrystalline or amorphous film exhibits electric characteristics equal to those of a single crystal. Therefore, it is possible to provide a semiconductor device in which constraints to manufacturing conditions are drastically eliminated, and which includes an InGaAIN-based nitride semiconductor layer which is inexpensive and has excellent electric characteristics as a channel.
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Inventors:
Hiroshi Fujioka
Atsushi Kobayashi
Atsushi Kobayashi
Application Number:
JP2015533999A
Publication Date:
October 11, 2017
Filing Date:
August 28, 2014
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| JP2012231129A | ||||
| JP2012169470A | ||||
| JP2007081362A | ||||
| JP2012238751A | ||||
| JP2751963B2 | ||||
| JP2012199549A |
Foreign References:
| US20130087783 | ||||
| WO2012026396A1 |
Other References:
Beierlein, Tilman,Properties of InGaN deposited on Glass at Low Temperature,MRS Internet Journal of nitride semiconductor reasearch,英国,ケンブリッジ大学,1997年,Vol.2, Article29
Attorney, Agent or Firm:
Seiji Ohno
Kenichi Katayama
Umeda Shinsuke
Kenichi Katayama
Umeda Shinsuke