Title:
INDIUM OXIDE POWDER, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING HIGH-DENSITY INDIUM TIN OXIDE TARGET USING THE SAME
Document Type and Number:
Japanese Patent JP3936655
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing In2O3 powder by a precipitation method by adding a precipitant to an indium solution.
SOLUTION: The In2O3 powder is obtained by adding the basic precipitant at a rate of 0.5 to 4 liter/minute to the indium solution of an initial indium ion concentration of 2 to 5 M while adjusting its pH in such a manner that the pH attains 5 to 9 to obtain an In(OH)3 precipitate, then calcining the precipitate at 600 to 1,100°C. As a result, the In2O3 powder which is 5 to 18 m2/g in the surface area measured by a BET method and is 40 to 160 nm in the average grain size measured by the BET method can be dasily manufactured. Accordingly, if the In2O3 powder is used, the high-density ITO target usable for manufacturing high-quality transparent electrodes of display elements, such as LCDs, ELs and FED elements, can be obtained.
Inventors:
Song Kyoka
Park Tetsu
Kei Kei Nan
Park Tetsu
Kei Kei Nan
Application Number:
JP2002355629A
Publication Date:
June 27, 2007
Filing Date:
December 06, 2002
Export Citation:
Assignee:
Samsung Corning Co., Ltd.
International Classes:
C01G15/00; C04B35/457; B22F9/16; C01G19/00; C04B35/01; C23C14/34; H01B1/08; (IPC1-7): C01G15/00; C04B35/457; C23C14/34
Domestic Patent References:
| JP11079745A | ||||
| JP6191846A | ||||
| JP9125236A |
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani