Title:
インジウムターゲット部材及びその製造方法
Document Type and Number:
Japanese Patent JP6678528
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an indium target member excellent in stability of film formation rate regardless of the crystal grain size of indium constituting a parent phase.SOLUTION: An indium target member has a copper concentration of 50 mass ppm or more and less than 2500 mass ppm and an oxygen concentration of less than 50 mass ppm, and is composed of residual indium and inevitable impurities. An average particle diameter of Cu-In compound particles is from 0.5 to 8 μm when observing the surface to be sputtered.SELECTED DRAWING: None
Inventors:
Endo Ryosuke
Application Number:
JP2016135285A
Publication Date:
April 08, 2020
Filing Date:
July 07, 2016
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
H01L21/203; B22C9/06; B22D21/00; B22D27/04; B22D27/20; C23C14/14; C23C14/34
Domestic Patent References:
| JP5254290B2 | ||||
| JP2009113074A | ||||
| JP2013253298A | ||||
| JP2015145530A | ||||
| JP2015212422A |
Foreign References:
| WO2015004958A1 | ||||
| CN101392362A | ||||
| WO2015016320A1 |
Attorney, Agent or Firm:
Axis International Patent Business Corporation