Title:
誘導結合高密度プラズマ源
Document Type and Number:
Japanese Patent JP4149909
Kind Code:
B2
Abstract:
A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.
More Like This:
Inventors:
Cuon, Bill H
Yebtiq, Yovan
Antorey, Sam
Strang, Eric J.
Yebtiq, Yovan
Antorey, Sam
Strang, Eric J.
Application Number:
JP2003501018A
Publication Date:
September 17, 2008
Filing Date:
March 25, 2002
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H05H1/46; B01D53/70; B01J19/08; H01J7/24; H01J37/32
Domestic Patent References:
| JP10098033A | ||||
| JP11026192A | ||||
| JP11162697A | ||||
| JP2000208298A |
Foreign References:
| WO1998048444A1 |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Sadao Muramatsu
Ryo Hashimoto