Title:
INFRARED DETECTION ELEMENT, INFRARED DETECTOR, SOLID STATE IMAGING DEVICE, AND METHOD FOR MANUFACTURING INFRARED DETECTOR
Document Type and Number:
Japanese Patent JP2006003301
Kind Code:
A
Abstract:
To provide an oxide thin film for a dielectric bolometer, its manufacturing method, and an infrared solid state imaging device using the oxide thin film for the dielectric bolometer.
An infrared detection film changing a dielectric constant in response to a temperature is denoted in a chemical formula: Ba(Ti1-xSnx)O3 (0<x<1), and change of the dielectric constant to temperature change of 1°C is 2% or greater. Furthermore, the chemical composition of Sn is 0.1-0.2, and film thickness is 2 μm or less. If the bolometer having the infrared detection film is used, the infrared detector with high sensitivity capable of operation at a room temperature and the solid state imaging device can be attained.
Inventors:
YOSHIDA SHINJI
OKUYAMA MASANORI
NODA MINORU
POPOVICI DANIEL
OKUYAMA MASANORI
NODA MINORU
POPOVICI DANIEL
Application Number:
JP2004182490A
Publication Date:
January 05, 2006
Filing Date:
June 21, 2004
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
OKUYAMA MASANORI
NODA MINORU
OKUYAMA MASANORI
NODA MINORU
International Classes:
G01J1/02; G01J5/20; G01J5/48; H01G7/04; H01L27/14; H04N5/33; G01J5/22
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori