Title:
赤外線検出素子及び赤外線固体撮像装置
Document Type and Number:
Japanese Patent JP5264597
Kind Code:
B2
Abstract:
An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.
Inventors:
Takanori Sugino
Application Number:
JP2009090782A
Publication Date:
August 14, 2013
Filing Date:
April 03, 2009
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
G01J1/02; H01L27/144; H01L31/10
Domestic Patent References:
| JP2001267542A | ||||
| JP2005009998A | ||||
| JP7012644A | ||||
| JP2002107224A |
Foreign References:
| WO1999031471A1 |
Other References:
Tomohiro Ishikawa 他,Low-cost 320x240 uncooled IRFPA using a conventional silicon IC process,Opto-Electr. Rev.,1999年,Vol. 7, No. 4,pages 297-303
Attorney, Agent or Firm:
Samejima Mutsumi
Kyousei Tamura
Keiichi
Kyousei Tamura
Keiichi