To provide an inspection method capable of properly inspecting the quantity (a concentration) of impurities driven unintentionally in ion implantation in a short time by easy treatment.
In the inspection method, arsenic is implanted to an oxide film in a set dosage first, the oxide film is recovered and analyzed by an ICP-MS, the quantity (the quantity of an implantation) of actually driven arsenic is detected, and a relationship is obtained between the dosage and the quantity of the implantation. When antimony ions are implanted actually, the antimony ions are implanted in a desired dosage (ion-implantation conditions) through the oxide film, the oxide film is recovered and analyzed by the ICP-MS, and the quantity (the concentration) of arsenic simultaneously implanted is detected when antimony ions are implanted. An analytical value (the quantity of the implantation) is converted into the dosage on the basis of the relationship between a previously obtained dosage and the quantity of the implantation, the ratio of the dosage of antimony as an original ion-implantation element to the dosage of unintentionally implanted arsenic is detected in an index as the dosage as ion-implantation conditions, and whether or not the ratio is kept within a tolerance is detected.
SHINYASHIKI HIROSHI
TOKAJI HIROYUKI
UCHIDA SHINJIRO
IMADA SHINGO
| JP2000021803A | 2000-01-21 | |||
| JPH07183249A | 1995-07-21 | |||
| JP2003194747A | 2003-07-09 | |||
| JPH10208686A | 1998-08-07 | |||
| JP2000021803A | 2000-01-21 | |||
| JPH07183249A | 1995-07-21 | |||
| JP2003194747A | 2003-07-09 | |||
| JPH10208686A | 1998-08-07 |
JPN6011000182, Ｓａｎｔｉｅｓｔｅｂａｎ ＲＳ， ｅｔ ａｌ．, "”Ｉｎ−ｆａｂ ｔｅｃｈｎｉｑｕｅｓ ｆｏｒ ｂａｓｅｌｉｎｉｎｇ ｉｍｐｌａｎｔ ｄｏｓｅ， ｃｏｎｔａｍｉｎａｔｉｏｎ”", ＳＯＬＩＤ ＳＴＡＴＥ ＴＥＣＨＮＯＬＯＧＹ, 200208, Ｖｏｌ． ４５， Ｎｏ． ８, ｐｐ． ６３−６８
Shingo Nishide
Koichiro Okura
Miki Sato
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