Title:
INSULATED GATE TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3189589
Kind Code:
B2
Abstract:
PURPOSE: To obtain a semiconductor device which has a high breakdown strength and high reliability without sacrificing the ON-characteristics by a method wherein a Zener diode is provided on the surface of the field relief region of a semiconductor substrate and the Zener diode is connected between a gate electrode and a drain electrode.
CONSTITUTION: A semiconductor device is composed of an IBGT Q1 and a Zener diode 30 which is connected between the gate 9 and the drain 13 of the vertical IBGT Q1. The Zener diode 30 is composed of n+-p junction diodes which are connected to each other in series and provided on the field insulating film of a termination region around the IBGT chip so as to form a ring. With this constitution, if an overvoltage is applied between the source and drain, the Zener diode is broken down and an avalanche current is applied to a gate circuit and the gate potential of the IBGT is elevated to turn on the IBGT which is protected from the overvoltage. Further, it is not necessary to add an overvoltage protective circuit which adds an occupation area, so that the ON-characteristics is not affected.
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Inventors:
Aki Nakano
Yoshiteru Shimizu
Yasuhiko Kohno
Yoshiteru Shimizu
Yasuhiko Kohno
Application Number:
JP22473994A
Publication Date:
July 16, 2001
Filing Date:
September 20, 1994
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L29/78; H01L27/04; H01L29/06; H01L29/739; (IPC1-7): H01L29/78; H01L29/06
Domestic Patent References:
| JP6196706A | ||||
| JP338881A | ||||
| JP5206471A |
Attorney, Agent or Firm:
Yasuo Sakuta