PURPOSE: To provide the title method and device with which an insulating film of good homogenous quality can be formed repeatedly.
CONSTITUTION: The title insulating film forming device is composed of a vapor- phase reaction device (its connection is indicated by the solid line in the diagram) and a control system (its connection is indicated by the broken line in the diagram). The above-mentioned vapor-phase reaction device is mainly composed of a reaction chamber 1 with which a vapor-phase reaction operation is conducted, and the control system, with which vapor-phase reaction will be controlled, is composed of an FT-IR 6 which observes the vapor-phase reaction in the reaction chamber 1, a detector 7 which detects the amount of subsrance grown by vapor-phase reaction based on the signal sent from the FT-IR 6, and a control device 8 with which the amount of substance grown by the treatment information, sent from the above-mentioned detector 7, is controlled uniformly. As a result, the condition of film formation can be properly controlled when necessary while the film is being formed.
HASHIMOTO TAKESHI
OOTA TOMOHIRO