To provide an insulating film which has superior adhesion to an inorganic film and suppresses a hillock of copper wiring, a semiconductor device with the insulating film, and a composition for film formation which provides the insulating film.

The insulating film is formed using the composition for film formation including a polymerizable compound which has, in the molecule, both a partial structure comprising a cage structure of the adamantane type and a polymerizable reactive group that contributes to polymerization reaction and/or a polymer obtained by partially polymerizing the polymerizable compound where adhesion measured using the insulating film and an SiCN film by an m-ELT method is not lower than 0.15MPa m(1/2) and not higher than 0.35 MPa m(1/2). The polymerizable reactive group comprises an aromatic ring and an ethynyl or vinyl group directly bonded to the aromatic ring. In the polymerizable compound, the number of carbon atoms derived from the aromatic ring is preferably not smaller than 15% and not larger than 38% with respect to the number of carbon atoms of the whole polymerizable compound.