Title:
INSULATING GATE TYPE FIELD EFFECT TRANSISTOR WITH PROTECTIVE DEVICE
Document Type and Number:
Japanese Patent JPS5369589
Kind Code:
A
Abstract:
PURPOSE: To make the MIS FET conductive and to protect this from destruction, by removing the parastic capacitance constituting the gate input capacitance or by making almost equal the gate input capacitance with the gate to drain electrode capacitance, and by increasing the divided voltage to the overvoltage developed at the capacitance between the gate and source electrode.
More Like This:
Inventors:
MATSUO KAZUYOSHI
Application Number:
JP14600776A
Publication Date:
June 21, 1978
Filing Date:
December 03, 1976
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H03F1/52; H01L27/02; H01L29/78; H03F1/42; (IPC1-7): H01L29/78; H03F1/00