Title:
INSULATING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS57130440
Kind Code:
A
Abstract:
PURPOSE:To elongate insulating creeping distance when a semiconductor element and a terminal are fixed interposing a metalized layer on the surface of a ceramic plate having a heat radiating metal plate on the back, and it is sealed with resin to constitute an insulating semiconductor device by a method wherein a notch is provided to the lower part of the terminal at the position nearby the outside circumference of the ceramic plate. CONSTITUTION:A heat radiating metal plate 1 is adhered on the back of a ceramic plate 3 interposing a solder layer 2 between them, and a metalized layer 4 is formed on the surface of the ceramic plate 3. Then a semiconductor element 10 is fixed on the layer 4 interposing a solder layer 11 between them, a terminal 6 is fixed at the prescribed distance using a solder layer 5, and the element 10 is molded with resin 7 exposing the tip end of the terminal 6. At this constitution, the notch 6a is provided to the lower end of the terminal 6, and accordingly length of the metalized layer 4 is made to short, and the creeping distance between the part A of the notch 6a and the end part B of the solder layer 3 is elongated to ensure dielectric strength.
More Like This:
| JPS59121860 | SUBSTRATE FOR SEMICONDUCTOR |
Inventors:
NAKASHIMA YOUICHI
KUROSU TOSHIKI
MIURA MASATAMI
OOTAKA HIROMI
YAMAZAKI TATSUO
KUROSU TOSHIKI
MIURA MASATAMI
OOTAKA HIROMI
YAMAZAKI TATSUO
Application Number:
JP1568081A
Publication Date:
August 12, 1982
Filing Date:
February 06, 1981
Export Citation:
Assignee:
HITACHI LTD
HITACHI HARAMACHI DENSHI KOGYO
HITACHI HARAMACHI DENSHI KOGYO
International Classes:
H01L21/52; H01L21/58; (IPC1-7): H01L21/58
Domestic Patent References:
| JP54100567B |