Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
INSULATION LAYER SEPARATING SUBSTRATE AND SEMICONDUCTOR DEVICE UTILIZING THIS SUBSTRATE
Document Type and Number:
Japanese Patent JPH0327548
Kind Code:
A
Abstract:

PURPOSE: To maintain sufficient characteristics in different kinds of semiconductor devices by providing in addition to a separated island having an entire bottom as deep as specified a separated island wherein a part of the bottom is as deep as specified and other parts are shallower.

CONSTITUTION: A semiconductor separation island 11 provided on an insulation separating substrate 10 is as deep as specified on the entire bottom. On the other hand the bottom of the semiconductor separation island 11 can be used as an island wherein a part of the bottom is as deep as specified and other parts are swollen to be shallower. Therefore manufacture is easy so that respective devices can have sufficient characteristics when a plural kinds of semiconductor devices with preferred island depths different are to be simultaneously formed.


Inventors:
YAMAGUCHI SHUICHIRO
IITAKA YUKIO
MATSUMOTO TAKESHI
Application Number:
JP16124089A
Publication Date:
February 05, 1991
Filing Date:
June 24, 1989
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
H01L21/762; H01L21/76; H01L21/8222; H01L27/06; H01L27/08; H01L31/10; (IPC1-7): H01L21/76; H01L27/06; H01L27/08; H01L31/10
Domestic Patent References:
JPS55115340A1980-09-05
JPS5627942A1981-03-18
JPS5910273A1984-01-19
JPH01169961A1989-07-05
Attorney, Agent or Firm:
Takehiko Matsumoto



 
Next Patent: METHOD FOR AUTOMATICALLY CHANGING SHAPE OF WIRING ON CONTACT