Title:
INSULATOR FOR ION IMPLANTATION SOURCE
Document Type and Number:
Japanese Patent JP2022027720
Kind Code:
A
Abstract:
To provide an ion implantation source for an ion implantation device, achieving an improvement in reliability.SOLUTION: An insulator for an ion implantation source includes: a first portion 302 which includes a first plurality of guide walls 312a, 312b, a first plurality of channels 314a, 314b formed by the first plurality of guide walls 312a, 312, and a core material 316; and a second portion 304 which includes a second plurality of guide walls 320a, and a second plurality of channels formed by the second plurality of guide walls 320a. A combination of the first plurality of guide walls 312a, 312b, the first plurality of channels 314a, 314b, the second plurality of guide walls 320a, and the second plurality of channels form a third channel to the core material 316 when the core material 316 is at least partially inserted into the second portion 304.SELECTED DRAWING: Figure 3A
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Inventors:
LIN TSUNG-MIN
LIN SHENG-CHI
JAO JUI-FENG
CHIEN FANG-CHI
TANG LUNG-YIN
LIN SHENG-CHI
JAO JUI-FENG
CHIEN FANG-CHI
TANG LUNG-YIN
Application Number:
JP2021125636A
Publication Date:
February 14, 2022
Filing Date:
July 30, 2021
Export Citation:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTUARING CO LTD
International Classes:
H01J37/08; H01J27/08; H01J37/317
Attorney, Agent or Firm:
Choi Hailong
Takayuki Kawai
Takayuki Kawai