PURPOSE: To convert an integrated circuit for quartz oscillation to low electric power, by using a stable Si oxide piled substance deposited by chemical vapor deposition, as a dielectric substance placed between electrodes of capacity for resonance, in a quartz oscillator in a high frequency quartz clock.
CONSTITUTION: A substrate 21 consists of an n type semiconductor whose impurity density is thin, and a semiconductor area 22 shows an area of the same type as a substrate whose impurity density is high, for taking electric contact of the substrate 21 and the surface wiring. In this case, an oxidized film 23 is an insulator consisting of a stable Si oxide piled substance deposited by chemical vapor deposition. Also, electrodes 24, 25 consist of Al, etc., and capacity for resonance formed on the semiconductor substrate through the oxidized film is capable of extremely reducing a resistance component for leading a loss in case of oscillation. In this way, it is possible to reduce electric power of the integrated circuit for quartz oscillation.
MOROKAWA SHIGERU
SEKIYA FUKUO
| JPS5558563A | 1980-05-01 | |||
| JPS5484958A | 1979-07-06 |