PURPOSE: To prevent the signal of a certain circuit part within an integrated circuit from being induced into another circuit part within the integrated circuit as noise and also to prevent a short circuit fault due to a pin hole and a crack and at the same time to reduce the characteristic deterioration due to parasitic capacitance mainly in a signal line.
CONSTITUTION: A ladder-like shield electrode 30 insulates a signal line 20. The ladder-like shield electrode 30 is constituted of parallel wiring parts in parallel with the signal line 20 and a plurality of step wiring parts to interconnect the parallel wiring parts. The step wiring parts cross the signal line 20 in being electrically insulated from the signal line 20. The ladder-like wiring 30 is connected with a ground wiring. The area of the crossing part of the signal line and the ladder-like shield electrode 30 is reduced, so that a short-circuiting fault due to a pin hole and a crack and also characteristic deterioration due to parasitic capacitance may be reduced with shielding effect being maintained.
JP3768071 | SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD |
JP2002076249 | CLUSTER SPHERICAL SEMICONDUCTOR |
UENO MASAYUKI