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Patent Searching and Data


Title:
集積回路及びセンサシステム
Document Type and Number:
Japanese Patent JP7477878
Kind Code:
B2
Abstract:
The present invention includes a thin film that has a band gap of 2.2 eV or more and in which a crystal includes an atomic vacancy and an electron, a microwave irradiation system that irradiates the thin film with a microwave in response to driving from outside, an excitation unit that excites the electron included in the thin film in response to driving from outside, and a detection unit that detects, as an electric signal, at least either one of an intensity of light outputted from the thin film when the electron transitions from an excited state to a ground state and a change in conductivity of the thin film based on excitation.

Inventors:
Mutsuko Hatano
Takayuki Iwasaki
Nobuhiko Nishiyama
Yuta Masuyama
Takuya Murooka
Application Number:
JP2020546233A
Publication Date:
May 02, 2024
Filing Date:
September 13, 2019
Export Citation:
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Assignee:
National University Corporation Tokyo Institute of Technology
International Classes:
G01R33/26; G01R33/02; G01R33/12; G02B6/12; G02B6/124; G02B6/34; G02B6/42
Domestic Patent References:
JP2017162910A
JP2016205954A
JP2016114563A
JP2011529265A
Foreign References:
US20180202952
WO2016177490A1
US20140247048
US20170328965
US5243199
US20030131787
US20170328965
Other References:
HATANO, Mutsuko et al.,Diamond Electronics,2016 46th Europian solid-state device research conference,IEEE,2016年09月12日,330 - 332
Attorney, Agent or Firm:
Patent Attorney Takada / Takahashi International Patent Office