PURPOSE: To provide an integrated comparator circuit which can be manufactured by an N-MOS or P-MOS technique simpler than a C-MOS technique.
CONSTITUTION: An integrated comparator circuit has a series circuit consisting of first and second MOSFET 1, 2 connected between a first terminal 5 and first input terminal 8 for operational voltage, an inverter stage having third and fourth MOSFET 3, 4 connected between third and fourth terminals for the operational voltage and a connection between a nodal point 10 between the first MOSFET 1 and the second MOSFET 2 on one hand and a gate terminal of the fourth MOSFET 4 on the other hand. In the integrated comparator circuit, the transmission characteristic curve of the second MOSFET 4 is steeper than that of the fourth MOSFET 4, the second and fourth MOSFET 1, 4 are an enhancement type MOSFET, the first and third MOSFET 1, 3 are a depression type MOSFET and all MOSFETs are of equal channel form.
YOOZEFUUMACHIASU GANCHIORAA
RAINARUTO ZANDAA
