Title:
ＭＥＭＳマイクロフォンと圧力センサの集積構造及びその製造方法
Document Type and Number:
Japanese Patent JP6484343
Kind Code:
B2
Abstract:
The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.
Inventors:
Sun Yang Mei
Application Number:
JP2017539537A
Publication Date:
March 13, 2019
Filing Date:
December 14, 2015
Export Citation:
Assignee:
Goltech Ink
International Classes:
H04R31/00; H01L29/84; H04R19/04
Domestic Patent References:
| JP2011176534A |
Foreign References:
| CN102158787A |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Kato Kazunori