PURPOSE: To provide an integration-type SPM sensor wherein a temperature increase is small in a sensor tip part due to heat generation of a distortion sensor.

CONSTITUTION: A piezo resistance layer 16 extended in the center is formed at a cantilever 12 extended from a support part 14. The cantilever 12 is covered with silicon oxide film, and electrodes 20, 22, 32, and 38 are formed on it. The electrode 20 and an electrode 24 are connected to the terminal part of the free terminal side of the resistance layer 16 and to the terminal part of the support part side, respectively. A p-type silicon region 26 is formed at the free terminal part of the cantilever 12 and the region 26 is partially a probe 10 with a sharp edge. The electrode 32 is connected to a p+ type silicon region 28 which is formed at one portion of the p-type silicon region 26 and an electrode 38 is connected to an n+ type silicon region 34 formed at a position which is apart at least by 10μm from the p-type silicon region 26. A rectangular hole 40 is formed between the resistance layer 16 and the peripheral part of the probe.