Title:
INTENSITY DISTRIBUTION MEASURING METHOD OF RECTANGULAR ELECTRON BEAM
Document Type and Number:
Japanese Patent JPS564080
Kind Code:
A
Abstract:
PURPOSE: To make possible the intensity distribution measurement of the beam without differential processing of the signal by scanning detection of the rectangular electron beam through a thin mark.
CONSTITUTION: Heavy metal such as platinum palladium is evaporated in a slender cross on the silicone wafer 5 or the like to form a mark. As the rectangular electronic beam EB irradiated on the wafer 5 is crossing the mark 6, it is reflected from the mark 6 according to the intensity distribution of the beam EB. Detecting the reflected electron beam from the mark 6 enables the measurement of the intensity distribution with less effect of noise of the rectangular beam without differential processing.
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Inventors:
NAMAE TAKAO
Application Number:
JP8036279A
Publication Date:
January 16, 1981
Filing Date:
June 26, 1979
Export Citation:
Assignee:
NIPPON ELECTRON OPTICS LAB
International Classes:
G01T1/29; (IPC1-7): G01T1/29