Title:
INTERPOSER OF SEMICONDUCTOR DEVICE HAVING AIR GAP STRUCTURE
Document Type and Number:
Japanese Patent JP2007027754
Kind Code:
A
Abstract:
To provide an interposer of a semiconductor device having an air gap structure.
The interposer 30 comprises a semiconductor substrate 31 including a void and a metal wire 32 disposed in the void of the semiconductor substrate 31. In the void of the semiconductor substrate 31, the metal wire is insulated by forming an insulating air gap 33. The interposer 30 further comprises a metal wire line, insulating means for providing insulation around the metal wire 32 through the air gap 33, and contact means electrically connected to a semiconductor integrated circuit formed on one side of the metal wire line. The metal wire line and the contact means are fixed in the interposer 30.
More Like This:
| JPS63309001 | MICROWAVE INTEGRATED CIRCUIT DEVICE |
| WO/2023/223952 | HIGH-FREQUENCY MODULE |
| JPH01296693 | ELECTRONIC CIRCUIT SUBSTRATE |
Inventors:
KIM CHANG-HYUN
KIM KYUNG-HO
KIM KYUNG-HO
Application Number:
JP2006194689A
Publication Date:
February 01, 2007
Filing Date:
July 14, 2006
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L23/12; H01L21/768; H01L23/522; H01L25/04; H01L25/18
Domestic Patent References:
| JP2001326275A | 2001-11-22 | |||
| JP2005175435A | 2005-06-30 | |||
| JPH04158553A | 1992-06-01 | |||
| JPH1092932A | 1998-04-10 |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro