Title:
反転パターン形成方法及び材料
Document Type and Number:
Japanese Patent JP5247936
Kind Code:
B2
Abstract:
A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
Inventors:
Michael el bradford
Eric Scott Moyer
Shen Wan
Eric Scott Moyer
Shen Wan
Application Number:
JP2012521646A
Publication Date:
July 24, 2013
Filing Date:
June 22, 2010
Export Citation:
Assignee:
DOW CORNING CORPORATION
International Classes:
G03F7/40; H01L21/027; H01L21/3065
Domestic Patent References:
| JP2010020109A | ||||
| JP2010151924A |
Foreign References:
| US20080199814 | ||||
| US20080299494 | ||||
| US20080067550 | ||||
| US20080124931 |
Attorney, Agent or Firm:
Kenji Sugimura
Kazuyuki Tomita
Kengo Yoshida
Kazuyuki Tomita
Kengo Yoshida