To provide an ion beam treatment device which suppresses a change in incident energy distribution of an ion beam.
The ion beam treatment device includes a plasma chamber for defining a generation space of plasma, a first grid 12 having a plurality of first through-holes 6a, a second grid 14 arranged on an opposite side of the generation space with the first grid 12 formed therebetween and having a plurality of second through-holes 6b for respectively communicating to the plurality of first through-holes 6a, a spacer 2 having projections 52, 54 projecting to both sides so as to fit to a first communicating hole 6A among the plurality of first through-holes 6a and a second communicating hole 6B among the plurality of second through-holes 6b, an extraction electrode 10 facing to the generation space for extracting ions in plasma, and a substrate base facing to the extraction electrode 10 for mounting a substrate to be treated by ions extracted from the generation space.
COPYRIGHT: (C)2010,JPO&INPIT
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| JP6176890A | ||||
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| JP62093835A |
Masakazu Ito
Suzuki Isobe
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