Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
ION BEAM WORKING DEVICE, ION BEAM SPUTTERING DEVICE AND ION BEAM MIXING DEVICE
Document Type and Number:
Japanese Patent JPH03150354
Kind Code:
A
Abstract:

PURPOSE: To prevent the contamination of an ion source by the particles from a target with the ion beam working device by setting the focus of the ion beam emitted from the ion source at the point just before the target and providing a shielding body having an aperture for passing the ion beam near the focal position of the ion beam.

CONSTITUTION: The ion beam 6 released from plural ion lead-out ports 1b provided in the lead-out electrode 1a of the ion source 1 of the ion beam working device, such as ion beam sputtering device or ion beam mixing device, is converted at the focus A and is then spread to irradiate the surface of the target 7. The particles sputtered from the target surface form the film consisting of the target material on the surface of a sample 8 in the position opposite to the target 7. The focus A of the ion beam 6 is set at the position LS nearer the lead-out electrode than the distance LT from the ion source 1 to the target 7 and the ion beam 6 is passed through the aperture of the metallic shielding plate 4 provided in this position. The contamination of the lead-out electrode by flying of a part of the sputtered particle parts from the target 7 toward the ion source 1 and the sticking thereof to the electrode is thus prevented.


Inventors:
KADOOKA HIDESHI
ARIMATSU KEIJI
OKA YUZO
Application Number:
JP28925689A
Publication Date:
June 26, 1991
Filing Date:
November 07, 1989
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HITACHI LTD
International Classes:
C23C14/32; C23C14/46; (IPC1-7): C23C14/32; C23C14/46
Attorney, Agent or Firm:
Tatsuyuki Unuma