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Title:
ION EXCHANGE MATERIAL FOR CHEMICAL-MECHANICAL POLISHING
Document Type and Number:
Japanese Patent JP2001311073
Kind Code:
A
Abstract:

To provide a CMP(chemical-mechanical polishing) composition for planerizing a metal layer of Cu and a Cu alloy, hardly causing dishing, capable of improving surface flatness, and capable of reducing a production cost by improving through-put.

An ion exchange material is used in a CMP methodology for polishing or thinning a semiconductor substrate and a layer on the semiconductor substrate. A polishing pad having the ion exchange material is included in the embodiment, and further the polishing of the semiconductor substrate or the layer on the semiconductor substrate with the polishing pad or a CMP composition including the ion exchange material therein, the polishing of the substrate or the layer on the substrate with the CMP composition, or the polishing with both thereof are included in the embodiment.


Inventors:
WANG YU-CHANG
TSAI STAN D
WIJEKOON KAPILA
BAJAJ RAJEEV
REDEKER FRED C
Application Number:
JP2000391083A
Publication Date:
November 09, 2001
Filing Date:
December 22, 2000
Export Citation:
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Assignee:
APPLIED MATERIALS INC
International Classes:
B08B1/04; B08B3/08; B24B37/00; B24B37/04; B24B53/007; B24D3/00; B24D3/34; B24D11/00; C09K3/14; H01L21/00; H01L21/304; (IPC1-7): C09K3/14; B24B37/00; B24D3/00; B24D11/00; H01L21/304
Domestic Patent References:
JP2000044932A2000-02-15
JP2001064631A2001-03-13
JP2000273445A2000-10-03
JP2000269169A2000-09-29
JP2001115143A2001-04-24
JP2001055559A2001-02-27
JP2000052235A2000-02-22
Attorney, Agent or Firm:
Yoshiki Hasegawa (2 outside)



 
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