Title:
ION IMPLANTATING DEVICE
Document Type and Number:
Japanese Patent JP2713692
Kind Code:
B2
Abstract:
PURPOSE: To efficiently accelerate an ion beam, and implant an ion by supplying an electron to this ion beam when a positive ion beam is passed through a particle accelerator.
CONSTITUTION: A positive ion is emitted as an ion beam 9 from an ion source 1, and is deflected by a mass separator 2, and is converged by a magnetic quadrupole lens 3 after mass separation of the positive ion is performed. This converged ion beam 9 is received to an RFQ accelerator 4, and is accelerated up to prescribed energy, and is emitted to an implantation chamber 5, and is irradiated to a target material 5a such as a semiconductor member being a processing object. At this time, an electron beam 10 pulled out by an electron gun 7 is deflected by a deflection electromagnet 8, and is also introduced into the RFQ accelerator 4 along the ion beam 9. Therefore, the ion beam 9 can be efficiently accelerated.
Inventors:
Kensuke Amemiya
Junya Ito
Katsumi Noguchi
Sakudo Kuniyuki
Junya Ito
Katsumi Noguchi
Sakudo Kuniyuki
Application Number:
JP21411494A
Publication Date:
February 16, 1998
Filing Date:
September 07, 1994
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H05H9/00; H01J27/20; H01J37/08; H01J37/147; H01J37/317; H01J49/30; H01L21/265; (IPC1-7): H01J37/317; H01J27/20; H01J37/08; H01J37/147; H01J49/30; H01L21/265; H05H9/00
Domestic Patent References:
| JP5287525A | ||||
| JP6271153A | ||||
| JP62227086A |
Attorney, Agent or Firm:
Kazuko Tomita