Title:
ION IMPLANTATION DEVICE, ION IMPLANTATION METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2022071836
Kind Code:
A
Abstract:
To stably supply source gas generated by the vaporization of a solid sample in a short time.SOLUTION: An ion implantation device includes a crucible 12 provided on the inside 72 of a vacuum vessel 70 and having an internal space capable of accommodating a solid sample 62 as a raw material for source gas, a laser light source 16 provided on the outside 74 of the vacuum vessel 70 and irradiating the crucible 12 with a laser beam, an arc chamber 60 that has an internal space 68 for plasma-forming the source gas to generate ions, and in which an ion beam 66 is drawn out from the internal space 68, and a nozzle 14 that connects the internal space of the crucible 12 and the internal space 68 of the arc chamber 60, and introduces the source gas vaporized in the internal space of the crucible 12 into the internal space 68 of the arc chamber 60.SELECTED DRAWING: Figure 2
Inventors:
HIROSE SAYUMI
Application Number:
JP2021170364A
Publication Date:
May 16, 2022
Filing Date:
October 18, 2021
Export Citation:
Assignee:
SUMITOMO HEAVY INDUSTRIES
International Classes:
H01J37/317; H01J27/08; H01J37/08
Attorney, Agent or Firm:
Morishita Kenki
Teruo Tomisho
Teruo Tomisho