Title:
ION IMPLANTATION METHOD, ION IMPLANTER AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2006278452
Kind Code:
A
Abstract:
To provide an ion implantation method and an ion implanter in which shallow implantation can be achieved.
In the ion implantation method for implanting impurities into a workpiece 410, impurities are implanted into the workpiece 410 through a buffer plate 30 spaced apart therefrom. The buffer plate 30 is arranged in a passage where accelerated ions reach the workpiece 410.
Inventors:
KANEMOTO HIROSHI
Application Number:
JP2005091757A
Publication Date:
October 12, 2006
Filing Date:
March 28, 2005
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/266; C23C14/48; H01J37/317; H01L21/265; H01L21/336; H01L29/78; H01L29/786
Attorney, Agent or Firm:
Yukio Fuse
Mitsue Obuchi
Tatsuya Ina
Takekoshi Noboru
Mitsue Obuchi
Tatsuya Ina
Takekoshi Noboru