Title:
ION IMPLANTATION PROCESSES AND APPARATUS USING GALLIUM
Document Type and Number:
Japanese Patent JP2022106692
Kind Code:
A
Abstract:
To provide an ion source apparatus that enables low vapor pressure dopant source materials to be efficiently used for implanting gallium dopant species.SOLUTION: An ion source apparatus for ion implantation includes an ion source chamber, and a consumable structure in or associated with the ion source chamber. The consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in a gaseous form to the ion source chamber. The solid dopant source material comprises gallium nitride, gallium oxide (either of which may be isotopically enriched with respect to a gallium isotope), or a combination thereof.SELECTED DRAWING: Figure 6
Inventors:
JOSEPH D SWEENEY
JOSEPH ROBERT DESPRES
TANG YING
SHARAD N YEDAVE
EDWARD EDMISTON JONES
OLEG BYL
JOSEPH ROBERT DESPRES
TANG YING
SHARAD N YEDAVE
EDWARD EDMISTON JONES
OLEG BYL
Application Number:
JP2022038090A
Publication Date:
July 20, 2022
Filing Date:
March 11, 2022
Export Citation:
Assignee:
ENTEGRIS INC
International Classes:
H01J27/02; H01J37/08; H01L21/265
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation
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