Title:
ION IMPLANTATION
Document Type and Number:
Japanese Patent JPH01128521
Kind Code:
A
Abstract:
PURPOSE:To precisely and easily control the depth of an outside layer without misregistration of the outside layer and the inside layer by ion-implanting impurities giving prescribed electrically conductive form on the surface of a semiconductor through a second ion implantation in which a second impurity ion is implanted in shallower and higher peak concentration than a first ion implantation. CONSTITUTION:A mask 5 attached to the surface of a semiconductor is commonly used in a first ion-implantation process and a second ion-implantation process, and both the ion-implantation process is continuously performed without inserting heat treatment and the like between the first ion-implantation process and the second ion-implantation process. This peak concentration Np2 is higher than that Np1 of the first ion-implantation process, for example, ion-implantation is X10<21>atom/cm<3> and ion-implantation depth X2 is shallower than the first ion-implantation depth X1, for example, 0.13mum. Therefore, misregistration of an outside layer 12 and an inside layer 22 is not produced. Further, since the depth of the outside layer 12 is determined in a heat treatment process, the depth of the outside layer 12 can be controlled precisely.
Inventors:
NAGAYASU YOSHIHIKO
Application Number:
JP28669287A
Publication Date:
May 22, 1989
Filing Date:
November 13, 1987
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/73; H01L21/265; H01L21/331; H01L21/8249; H01L27/06; H01L29/72; H01L29/732; (IPC1-7): H01L21/265; H01L27/06; H01L29/72
Attorney, Agent or Firm:
Iwao Yamaguchi
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