Title:
イオン注入器用リペラー、カソード、チャンバーウォール、スリット部材、及びこれを含むイオン発生装置
Document Type and Number:
Japanese Patent JP6539414
Kind Code:
B2
Abstract:
Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.
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Inventors:
Fan, gute
Application Number:
JP2018519662A
Publication Date:
July 03, 2019
Filing Date:
June 10, 2016
Export Citation:
Assignee:
VALUE ENGINEERING,LTD.
International Classes:
H01J37/08; H01J27/06; H01J37/317
Foreign References:
| US20120286152 | ||||
| WO2016138547A1 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Kato Kazunori