Title:
イオン源デバイス
Document Type and Number:
Japanese Patent JP7190436
Kind Code:
B2
Abstract:
The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules.
Inventors:
De Castro, Olivier
Della-Negra, Serge
Dorset, david
Wilts, Tom
Della-Negra, Serge
Dorset, david
Wilts, Tom
Application Number:
JP2019547143A
Publication Date:
December 15, 2022
Filing Date:
February 28, 2018
Export Citation:
Assignee:
Luxembourg Institute of Science and Technology (List)
International Classes:
H01J27/08; H01J37/08; H01J37/317
Domestic Patent References:
| JP5205681A | ||||
| JP2001126630A | ||||
| JP2007227381A | ||||
| JP2010527095A | ||||
| JP2016115674A |
Foreign References:
| US20050205800 | ||||
| US20070262263 | ||||
| US20100148062 | ||||
| US20140034828 | ||||
| US20160172146 | ||||
| WO2015173911A1 |
Other References:
M. Olivier De Castro,Development of a Versatile High-Brightness Electron Impact Ion Source for Nano-Machining, Nano-Imaging and Nano-Analysis,THESE DE DOCTORAT DE L’UNIVERSITE PARIS-SACLAY,フランス,Universite PARIS-SACLAY,2016年12月07日
Attorney, Agent or Firm:
Kawaguchi International Patent Office