Title:
IONIZED PVD SOURCE TO GENERATE UNIFORM LOW PARTICLE DEPOSITION
Document Type and Number:
Japanese Patent JPH10212573
Kind Code:
A
Abstract:
To provide a target structure to enable the uniform erosion and efficient utilization of the sputtable material while generally reducing the generation of particles to be generated by the rearward scattering deposition.
A target 10 is provided with an annular region 42 formed of the sputtable material, and a center region 44 which is constituted to accept not the rearward scattering deposition but the direct deposition. The annular region of the target is provided with a generally recessed, preferably, substantially truncated-conical exposed surface 12. An exposed surface which is approximately flat or projected, preferably, substantially and approximately recessed truncated-conical is provided on the center region of the target.
Inventors:
FU JIANMING
Application Number:
JP487098A
Publication Date:
August 11, 1998
Filing Date:
January 13, 1998
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
C23C14/34; H01J37/34; H01L21/203; (IPC1-7): C23C14/34; H01L21/203
Attorney, Agent or Firm:
Yoshiki Hasegawa (4 outside)