Title:
IrMn系合金成膜用ターゲット、およびそれを用いた反強磁性膜
Document Type and Number:
Japanese Patent JP4002659
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a target for IrMn sereis alloy film formation excellent in discharge stability at the time of sputtering, furthermore free from the generation of target cracking even by thermal stress generated at the time of sputtering and moreover large in the exchange combination magnetic field of an antiferromagnetic film formed by sputtering. SOLUTION: Ir phases are dispersedly present in the structure of an IrMn series antiferromagnetic alloy target, and furthermore, the content of oxygen in the target is regulated to <=3000 ppm. As for the producing method, Ir powder, Mn powder and Mn-X allay powder or X powder (X denotes at least one kind among Fe, Ni, Cu, Ta, Hf, Pd, Ti, Nb, Cr, W, Zr, Mo or the like) are formulated by desired quantity, and pressure sintering is executed at a temp. lower than the liq. phase exhibiting temp. of the powdery mixture.
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Inventors:
Shunichiro Matsumoto
Hideo Murata
Hidetoshi Hagiwara
Hideo Murata
Hidetoshi Hagiwara
Application Number:
JP5166998A
Publication Date:
November 07, 2007
Filing Date:
March 04, 1998
Export Citation:
Assignee:
ALPS ELECTRIC CO.,LTD.
International Classes:
C23C14/34; G11B5/39; C22C1/04; C22C5/00; C22C5/04; C22C22/00; H01F10/08; H01F10/32; H01F41/18; H01L43/12
Domestic Patent References:
| JP11100631A | ||||
| JP9148132A |
Foreign References:
| WO1998022636A1 |
Attorney, Agent or Firm:
野▲崎▼ 照夫