Title:
高K誘電性膜およびチタン系前駆体を用いるその製造方法
Document Type and Number:
Japanese Patent JP2011521479
Kind Code:
A
Abstract:
Methods are provided to form and stabilize high-κ dielectric films by vapor deposition processes using metal-source precursors and titanium-based β-diketonate precursors according to Formula I: Ti(L)x wherein: L is a β-diketonate; and x is 3 or 4. Further provided are methods of improving high-κ gate property of semiconductor devices by using titanium precursors according to Formula I. High-κ dielectric film-forming lattices are also provided comprising titanium precursors according to Formula I.
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Inventors:
Choker, Paul Raymond
Hayes, Peter Nicolas
Hayes, Peter Nicolas
Application Number:
JP2011510732A
Publication Date:
July 21, 2011
Filing Date:
May 22, 2009
Export Citation:
Assignee:
Sigma-Aldrich Co.
International Classes:
H01L21/316; C23C16/40
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoshi Nakata
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoshi Nakata