PURPOSE: To uniformize composition in a joining material for fixing a semiconductor chip to a base material and to shorten the necessary heat treatment time to complete the joining.
CONSTITUTION: Continuous gaps 43 are arranged in a high m.p. soldering layer 41, and by absorbing excess low m.p. soldering layers 42a, 42b into the continuous gaps 45 at the time of wet-spreading the low m.p. soldering layers 42a, 42b into between the semiconductor chip and the base material, the thickness of the low m.p. soldering layers 42a, 42b at between the semiconductor chip and the base material, is thinned and uniformized and much contacting interfaces are formed at between the continuous gaps 43 and the low m.p. soldering layers 42a, 42b and the necessary heat treatment time to diffusion is shortened.
NISHINAKA YOSHIRO
FUKUTOME KATSUYUKI
UEDA NAOTO
TAKEUCHI TOSHIO
JPS59169694A | 1984-09-25 | |||
JPS5321062A | 1978-02-27 | |||
JPS53100152A | 1978-09-01 | |||
JPS63168291A | 1988-07-12 | |||
JPH0347673A | 1991-02-28 | |||
JPH0242787B2 | 1990-09-26 |