Title:
JUNCTION TYPE FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JPS5213781
Kind Code:
A
Abstract:
PURPOSE: In order to produce a junction-type FET which possesses high withstand voltage and high gm by means of enlarging the width W of channel without the expansion of plane-area.
Inventors:
SUNAMI HIDEO
Application Number:
JP8925175A
Publication Date:
February 02, 1977
Filing Date:
July 23, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/80; H01L21/337; H01L29/04; H01L29/06; H01L29/808; (IPC1-7): H01L29/04; H01L29/06; H01L29/80