Title:
LAMINATE, FORMING METHOD THEREOF, INSULATED FILM AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2007088259
Kind Code:
A
Abstract:
To provide a laminate having a low specific dielectric constant and excellent in bonding property between organic and inorganic films, and to provide a forming method thereof, an insulated film and a semiconductor device.
The method of manufacturing a laminate includes: forming a first applied film for the inorganic film on a base material; applying an adhesion promoting compound containing a reactant silane compound and an organic solvent on the first coating film, and then, forming a second coating film for the organic film, thereby forming a laminate film; and hardening the laminate film. The reactant silane compound is at least one kind selected from a group of compounds represented by (Ri)nSi(Xj)4-n, i=1 to n, n=1 to 3, j=1 to 4-n.
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Inventors:
HATTORI SEITARO
SEKIGUCHI MANABU
KOKUBO TERUKAZU
SEKIGUCHI MANABU
KOKUBO TERUKAZU
Application Number:
JP2005276050A
Publication Date:
April 05, 2007
Filing Date:
September 22, 2005
Export Citation:
Assignee:
JSR CORP
International Classes:
H01L21/312; B05D1/36; B05D7/24; B32B9/00; H01L21/768
Attorney, Agent or Firm:
Mitsue Obuchi
Yukio Fuse
Inoue Ichi
Yukio Fuse
Inoue Ichi